Recently, the 2019 Hunan Patent Award was announced, and the "epitaxial growth method and structure of LED structure with superlattice barrier layer" patent technology of Chenzhou XiangNeng Hualei Photoelectric Co., Ltd. won the third prize of Hunan Patent Award.

This patent technology has promoted the rapid penetration and application of domestic LED lighting chips, broken the situation that middle and high-end LED chips are monopolized by foreign countries, solved many key technical problems such as low LED light extraction efficiency, poor heat dissipation and low p-type doping ionization rate, promoted the substantial improvement of LED epitaxial chip technology, and made the epitaxial chip technology level of XiangNeng Hualei Photoelectric Co., Ltd. have Leading position in China.

The LED chip products manufactured by this patent technology are mainly used in the field of semiconductor lighting, which can replace the traditional lighting source, realize green energy saving and environmental protection benefits, and save 6 million kilowatts of lighting power annually. Since its formal and legal implementation in June 2016, the patent technology has increased the accumulated sales revenue of 1606.77 million yuan, the new profit of 326.52 million yuan and the new tax of 141.52 million yuan for XiangNeng Hualei Photoelectric Co., Ltd.